Reliability-Aware Device and Programming Scheme Optimization for PBS/NBS-Immune IGZO-Based 2T0C DRAM

This work develops a reliability-aware device and programming scheme optimization methodology for IGZObased 2T0C DRAM cells. The read and write transistors were fabricated by adopting different compositions and layer thicknesses of IGZO channel. Meanwhile, the reliability degradation map in the full <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\left\{\mathrm{V}_{\text{GS}, \text{str}}, \mathrm{V}_{\text{DS}, \text{str}}\right\}$</tex> space showed that the degradation of PBS can be mitigated by applying a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text{DS,str}}$</tex>, from which a PBS-mitigated programming scheme was developed. Finally, the PBS/NBS immunity of 2T0C DRAM cells were demonstrated.