TCAD and Mixed-Mode Simulation Supporting the Development of Contact-Controlled Thin-Film Transistors and Circuits

This paper presents recent advances in contact-controlled transistors supported by numerical simulation using Silvaco Atlas. In such devices, the source injection area, rather than the channel, governs drain current magnitude. Their correct design and application relies on deep understanding of internal operation; therefore technology computer-aided design (TCAD) is a useful optimization tool for established source-gated transistors (SGT) and emerging multimodal transistors (MMT) alike. In the absence of compact models, mixed-mode circuit simulations provide a valuable route toward application design.