Optimized Electric Field Distribution and Dynamic Performance in GaN HEMTs Using Segmented-Extended $\boldsymbol{p}-\mathbf{GaN}$ Gate Structures

A segmented-extended <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$p$</tex>-GaN gate (SEP) structure for AlGaN/GaN HEMTs was developed to address electric field challenges and enhance dynamic <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{ON}}$</tex>. The SEP structure, combining traditional and extended <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$p$</tex>-GaN gate designs, demonstrated improvements in OFF-state electric field distribution and dynamic <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{ON}}$</tex> compared to traditional designs. 3D TCAD simulations revealed that reduced segmented dimensions significantly benefit OFF-state electric field modulation, providing insights into optimizing both reliability and dynamic performance in GaN power devices. d d