Physics of Operation of GaN Power Devices: Modeling Device and Circuit Effects Using Mit Virtual Source GaNFET (MVSG) Model

We present a framework to capture essential physics of operation of devices built on Gallium Nitride technology for High-Voltage (HV) and power applications. Devices include Unidirectional (UDS) and Bi-directional Switches (BDS) that span voltages between <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$60-650 \mathrm{V}$</tex>. The modeling framework is based on well-known industry standard MVSG Verilog-A compact model platform. The model is proven to distill essential device physics to predict device-circuit interactions in power conversion applications. In this work, we show the model comparison against DC-IVs, CVs, switching measurements of UDS and BDS along with a demonstration of slew-rate prediction; a key device-circuit interaction effect. Secondary effects such as self-heating, charge-trapping, P-GaN gate-dynamics are also highlighted.