4H-SiC Semiconductor for EV and Beyond

4H-SiC (SiC) is an emerging semiconductor material. SiC power devices provide advantages of high efficiency, high voltage, high temperature, high thermal dissipation, and relatively high frequency, which make SiC a “chosen” material for electrical power conversion, a critical material to achieve the goal of Net-Zero Carbon Emission. As a matter of fact, industry is pouring huge fund to build up SiC semiconductor eco-system, the market is also growing extremely fast at CAGR of more than 60% in the past several years. However, there are still some challenges for SiC to penetrate more applications, including the growth rate and defects within SiC material, gate oxide process of SiC MOSFET, reliability and ruggedness of SiC devices, materials system enabling SiC devices for high temperature applications. With innovation of process and device technology, cost down and yield up of SiC industry chain, SiC is poised to play a more and more important role in the energy conversion of electrical vehicle (EV), green energy, track transportation, smart grid, and the emerging AI computing and data storage.