Improved Breakdown Voltage and Leakage Current in $\beta$Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode Realized by N Ion-Implantation Edge Termination
In this work, we have demonstrated high performance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta\text{Ga}_{2} \mathrm{O}_{3}$</tex> Schottky barrier diodes (SBDs) with superior power figure-of-merit (PFOM) and breakdown voltage (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text{br}}$</tex>) by adopting the N ion-implantation edge termination (NIET) structure. It is observed that the introduction of the NIET structure significantly reduces the reverse leakage current, in the meanwhile, it can maintain the decent forward characteristic. The device with the N ion implantation at the edge of the Schottky electrode exhibited a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text {br }}$</tex> of 1.65 kV, a specific on-resistance (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{on}, \text{sp}}$</tex>) of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$5.34 ~\mathrm{m} \Omega \cdot ~\text{cm}^{2}$</tex>, a PFOM of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.509 \text{GW} / \text{cm}^{2}$</tex>, and a reverse current density of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$5.5 \times 10^{-6}$</tex> <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{A} / \text{cm}^{2} {@}-1000 ~\mathrm{V}$</tex>. These results show the great potential for the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta-\text{Ga}_{2} \mathrm{O}_{3}$</tex> SBDs with NIET structure in power electronic applications.
Authors
- Yinchi Liu (ORCID: https://orcid.org/0009-0007-8361-2879)
- Rong Zeng (ORCID: https://orcid.org/0000-0002-4514-605X)
- Hongqiang Zhu (ORCID: https://orcid.org/0000-0002-2056-7923)
- Y. P. Guo (ORCID: https://orcid.org/0000-0002-7477-5234)
- Xuning Zhang (ORCID: https://orcid.org/0000-0002-4224-9408)
- Yaoyi Wang (ORCID: https://orcid.org/0000-0001-9336-3211)
- Wen-Jun Liu (ORCID: https://orcid.org/0000-0003-4217-8838)
- Hao Zhang (ORCID: https://orcid.org/0000-0002-5573-9318)
- Shiyu Li (ORCID: https://orcid.org/0000-0003-4948-8353)
- Chunlei Wu (ORCID: https://orcid.org/0000-0002-0944-2564)
- Xun Lu (ORCID: https://orcid.org/0009-0008-4873-8625)
- Jining Yang
- Yiwen Yu
- Xinlong Zhou (ORCID: https://orcid.org/0000-0001-7003-8459)
- Zhenxin Wang (ORCID: https://orcid.org/0000-0002-1908-9848)
Institutions
- Fudan University (CN)
- Shanghai Fudan Microelectronics (China) (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11041272
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Science and Technology Commission of Shanghai Municipality
- National Key Research and Development Program of China