50 NM Gan Hemts Technology with High Frequency, Low Noise, and High JFoM

Our 50 nm GaN HEMTs with source-to-drain length (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{L}_{\text{sd}}$</tex>) of 200 nm reached cut-off frequencies <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{f}_{\mathrm{T}} / \mathrm{f}_{\text {max }}$</tex> of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$230 / 525 \text{GHz}$</tex>. W-band load-pull measurements indicate a 7.4 dB linear gain, 15.8 dBm output power, and 15 % efficiency. A low noise figure of 1 dB is achieved from <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$25-35 \text{GHz}$</tex>. Devices with 5 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mu \mathrm{m} \mathrm{L}_{\text{sd}}$</tex> exhibited a breakdown voltage of 180 V and a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{f}_{\mathrm{T}}$</tex> of 117 GHz, resulting in a JFoM of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$21 \text{THz} \cdot \mathrm{V}$</tex>.