Boosting Mobility of Oxide TFTs via PVD and ALD Hybrid Process
The physical vapor deposited (PVD) oxide semiconductor TFTs often suffer from the trade-off between positive threshold voltage (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\text{th}}$</tex>) and high mobility. In this work, the hybrid active layer of sputtered InZnO (IZO) and atomic layer deposited (ALD) InGaO (IGO) is investigated. After ALD residuals are thermally removed, a high-mobility quantum well can be formed at the well-defined PVD-IZO/ALD-IGO heterojunction. Compared to the PVD-IZO TFT, the PVD-ALD one shows considerably elevated mobility, and maintains low off-current and positive <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\text{th}}$</tex>.
Authors
- Shengjie Yang
- Shengdong Zhang (ORCID: https://orcid.org/0000-0002-1815-8661)
- Tengyan Huang (ORCID: https://orcid.org/0000-0001-8217-0852)
- Yuhang Zhang (ORCID: https://orcid.org/0000-0003-1987-0703)
- Xinwei Wang (ORCID: https://orcid.org/0000-0002-1191-8162)
- Huan Yang (ORCID: https://orcid.org/0000-0003-4621-6010)
- Lei Lü (ORCID: https://orcid.org/0000-0001-5275-2181)
- Xiao Li (ORCID: https://orcid.org/0000-0003-2616-9333)
Institutions
- Peking University (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11041019
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Key Research and Development Program of China