Controllable Oxygen Vacancies in NbO<sub>x</sub> MOTT Memristor for Tunable Spiking Neurons
Artificial spiking neurons based on <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{NbO}_{\mathrm{x}}$</tex> memristors are widely used in neuromorphic systems, but their performance generally exhibits limited reconfigurability after the forming process. Herein, we present a method for post-forming the device through annealing to facilitate performance modulation. This post-annealing process facilitates the diffusion of oxygen vacancies into the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{NbO}_{\mathrm{x}}$</tex> layer, subsequently altering its performance characteristics. The proposed method enhances the tunability of artificial neurons and paves the way for adaptable neuromorphic devices.
Authors
- Bowen Zhu (ORCID: https://orcid.org/0000-0001-7534-9723)
- Fanfan Li (ORCID: https://orcid.org/0000-0002-9531-6678)
- Guolei Liu (ORCID: https://orcid.org/0009-0009-2177-9942)
- Dingwei Li
Institutions
- Westlake University (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11040214
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00