Enabling Highly-Efficient, Low-Latency Analog CAM Operations with Optimized MoS <sub>2</sub> Flash Memory Devices
Emerging non-volatile memory-based analog content addressable memories promise massively parallel data search and explainable edge processing. Still, their performance improvement has been bottlenecked by silicon-based transistor performance. In response, we optimize atomic thin MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> flash memories with a record-high readout current (60 μA/μm) and a large current ON/OFF ratio (>10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup>) for low-latency, low column interference, and high energy efficiency of analog CAM cells, enabled by Antimony (Sb) semimetal contact for lower contact resistance and better gate controllability. We experimentally demonstrated the range search operation with our fabricated MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> analog CAM array, promising the potential of atomically thin semiconductors for developing next-generation high-speed and low-power edge devices.
Authors
- Bo Wen (ORCID: https://orcid.org/0000-0002-6106-9509)
- Ruibin Mao (ORCID: https://orcid.org/0000-0001-6085-0486)
- Pak San Yip (ORCID: https://orcid.org/0009-0005-1484-8840)
- Paddy K. L. Chan (ORCID: https://orcid.org/0000-0002-3166-2192)
- Dong‐Keun Ki (ORCID: https://orcid.org/0000-0002-4638-2038)
- Jinyao Tang (ORCID: https://orcid.org/0000-0002-0051-148X)
- Guoyun Gao (ORCID: https://orcid.org/0000-0003-2572-1413)
- Hongxia Xue (ORCID: https://orcid.org/0009-0004-4935-3074)
- Mingrui Jiang (ORCID: https://orcid.org/0009-0000-2364-3904)
- Lain‐Jong Li (ORCID: https://orcid.org/0000-0002-4059-7783)
- Qihan Liu (ORCID: https://orcid.org/0000-0002-0907-4773)
- Yang Ni (ORCID: https://orcid.org/0000-0001-5508-6356)
- Can Li (ORCID: https://orcid.org/0000-0003-3795-2008)
- Han Wang (ORCID: https://orcid.org/0000-0001-5121-3362)
- Zhiyuan Du (ORCID: https://orcid.org/0009-0005-8636-1652)
- Yingnan Cao
- Hao Jiang (ORCID: https://orcid.org/0009-0001-8534-4130)
Institutions
- Chinese University of Hong Kong (HK)
- Fudan University (CN)
- University of Hong Kong (HK)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11041521
- Citations
- 1
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- National Natural Science Foundation of China