The Observation of 2D Electron Gas at Ga<sub>2</sub>O<sub>3</sub>/IGZO Interface
In this work, we demonstrate a novel oxide semiconductor thin-film transistor (TFT) with Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/IGZO heterojunction structure by atomic layer deposition (ALD). A high-density two-dimensional electron gas (2DEG) over <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$6 \times 10^{13} / \text{cm}^{2}$</tex> is achieved, by forming a Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/IGZO interface, the density of which is beyond the gate control limitation, leading to a low channel resistance. The proposed Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/IGZO heterojunction TFT enables a new approach to enhance the drive current of oxide TFTs beyond conventional material engineering for high mobility.
Authors
- Zhiyu Lin (ORCID: https://orcid.org/0000-0002-7614-7709)
- Chen Wang (ORCID: https://orcid.org/0000-0002-3550-6146)
- Mengwei Si (ORCID: https://orcid.org/0000-0003-0397-7741)
- Jinxiu Zhao (ORCID: https://orcid.org/0000-0002-2008-7620)
Institutions
- Shanghai Jiao Tong University (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11041586
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00