A SAW Pressure Sensor Based on AlN Thin Film with a Novel Differential Structure: Balancing Sensitivity Enhancement and Temperature Decoupling
Two SAW devices were integrated on a pressure-sensitive diaphragm based on an AlN film substrate. The placement of the devices was carefully designed according to the frequency variation behavior of the SAW devices and the strain distribution across the diaphragm, forming an effective differential structure. Experimental results demonstrated the beneficial effects of this design: the pressure sensitivity increased from 2.2267 ppm/kPa to 24.8767 ppm/kPa, while the temperature sensitivity decreased from 21.2572 ppm/°C to 3.8763 ppm/°C.
Authors
- Aobei Chen (ORCID: https://orcid.org/0000-0002-1220-8963)
- Dezhi Zheng (ORCID: https://orcid.org/0000-0003-3998-5989)
- Ge Gao (ORCID: https://orcid.org/0009-0003-6648-751X)
- Dapeng Li (ORCID: https://orcid.org/0000-0002-3255-6084)
- Chun Hu (ORCID: https://orcid.org/0000-0002-0862-4251)
Institutions
- Beijing Institute of Technology (CN)
- Beihang University (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11040413
- Primary Topic
- Acoustic Wave Resonator Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Key Research and Development Program of China