Effect of Fin Dimensions on the Performance of Gan-on-Si Fin-HEMTs

The influence of fin dimensions variation on characteristics the AlGaN/GaN Fin-HEMTs on Si are reported in this work. The device with the fin widths of 250 nm exhibited a maximum drain current of 1.5 A/mm, a peak transconductance of 314 mS/mm, a gate voltage swing of 3.7 V, a cut-off frequency <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$f_{\mathrm{T}}$</tex> of 35 GHz, and a maximum oscillation frequency <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$f_{\max}$</tex> of 78 GHz. Good performance demonstrates its potential for cost-effective microwave wave applications.