A Novel Mixed Collector Structure IGBT Operating at High Temperature

This work proposes a novel insulated gate bipolar transistor (IGBT) with a mixed N-region collector (MNC-IGBT). The addition of a thin N-type doped region within the P-type collector serves to effectively reduce the amplification effect of the internal parasitic PNP transistor on the leakage current in the offstate. As a result, MNC-IGBT markedly reduces the leakage current and increases the operational temperature of the device. The simulation results demonstrate that the leakage current of the MNC-IGBT is reduced by 9 % and 8 %, respectively, at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$175^{\circ} \mathrm{C}$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$200^{\circ} \mathrm{C}$</tex> in comparison to conventional CSTBT, while maintaining a higher breakdown voltage even at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$215^{\circ} \mathrm{C}$</tex>. Furthermore, the onstate voltage drop (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text{on }}$</tex>) and switching losses (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{E}_{\text{on }}, \mathrm{E}_{\text{off }}$</tex>) of MNCIGBT are close to those of the CSTBT. The excellent performance of MNC-IGBT provides a reliable solution for increasing the operating temperature of IGBTs.