Unveiling the Role of Oxygen Vacancy Inhomogeneity in Enhancing the Reliability of Ferroelectric HfO <sub>2</sub> ZrO <sub>2</sub> Superlattice Structures
The <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{HfO}_{2} / \text{ZrO}_{2}$</tex> ferroelectric superlattice (SL) structure is a promising material for Back-End-of-Line-compatible ferroelectric memory applications, though questions remain regarding its reliability mechanisms. In this work, for the first time, we have provided physical evidence of the uneven oxygen vacancy distribution within the SL structure. This inhomogeneity distribution not only mitigates the wake-up effect but also significantly enhances reliability, such as improved breakdown voltage and endurance. Our findings offer valuable insights for advancing SL ferroelectric thin films in memory technology.
Authors
- Runsheng Wang (ORCID: https://orcid.org/0000-0002-7514-0767)
- Hong-Liang Lü (ORCID: https://orcid.org/0000-0003-2398-720X)
- Jinhao Liu (ORCID: https://orcid.org/0000-0003-1914-332X)
- Boyao Cui
- Yichen Wen (ORCID: https://orcid.org/0000-0002-4146-8086)
- Zhigang Ji (ORCID: https://orcid.org/0000-0003-1138-804X)
- Ru Huang (ORCID: https://orcid.org/0000-0002-8146-4821)
- Xuepei Wang (ORCID: https://orcid.org/0000-0003-2558-4367)
- Maokun Wu (ORCID: https://orcid.org/0000-0001-9079-7225)
- Yishan Wu (ORCID: https://orcid.org/0000-0003-0602-9640)
- David Wei Zhang
- S. Ye (ORCID: https://orcid.org/0000-0003-3229-0746)
- Yuchun Li (ORCID: https://orcid.org/0000-0002-8968-2364)
Institutions
- Shanghai Jiao Tong University (CN)
- Peking University (CN)
- Fudan University (CN)
- Shanghai Fudan Microelectronics (China) (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11041366
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00