Dynamic Performance Analysis of Ultra-Fast Inverter Based on Tri-Gate AlGaN/GaN MIS-HEMTs
This work demonstrates dynamic response characteristics of the tri-gate AlGaN/GaN high electron mobility transistor (HEMT) direct coupled FET logic (DCFL) inverter. The threshold voltage of the inverter is 2.74 V, the rise and fall time are 2.6 ns and 2.0 ns respectively with 1.8 ns and 0.2 ns propagation delay for each edge. The mechanisms for the excellent switching time performance are also revealed from the perspective of the device.
Authors
- Yunsong Xu (ORCID: https://orcid.org/0000-0001-5594-1295)
- Jiangmin Gu
- Shih‐Torng Ding (ORCID: https://orcid.org/0000-0002-9866-1776)
- Kain Lu Low (ORCID: https://orcid.org/0000-0002-3999-7261)
- Minh Quan Duong (ORCID: https://orcid.org/0000-0003-4846-1394)
- Wen Liu (ORCID: https://orcid.org/0000-0002-2212-1861)
- Haofeng Ji (ORCID: https://orcid.org/0000-0002-7707-9090)
- Yanyan Jiang (ORCID: https://orcid.org/0000-0001-7651-9560)
- Weisheng Wang (ORCID: https://orcid.org/0000-0001-6234-9580)
Institutions
- Xi’an Jiaotong-Liverpool University (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11040600
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China