HfO<sub>2</sub>-Based Ferroelectric Field-Effect Transistors for Next-Generation Storage and In-Memory Computing Applications
HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-based Ferroelectric field-effect transistor (FeFET) is a promising technology for advanced memory and computing systems, offering CMOS compatibility, low-power consumption, and scalability. This paper highlights our recent findings in FeFET reliability, including endurance enhancement at cryogenic temperatures, polarizationinduced temperature instability (PTI) and disturb issue in a NAND array. Possible solutions are proposed to mitigate these reliability issues. In addition, FeFET demonstrates significant potential in multi-level content addressable memory (CAM), hybrid-precision synapses for neuromorphic computing, and logic-in-memory (LiM).
Authors
- Xiao Yu (ORCID: https://orcid.org/0000-0001-8769-521X)
- Ran Cheng (ORCID: https://orcid.org/0000-0001-9410-8263)
- Chengji Jin (ORCID: https://orcid.org/0000-0002-8517-459X)
- Jiuren Zhou (ORCID: https://orcid.org/0000-0002-0915-5354)
- Genquan Han (ORCID: https://orcid.org/0000-0001-5140-4150)
- Jiajia Chen (ORCID: https://orcid.org/0000-0002-7573-176X)
- Siying Zheng (ORCID: https://orcid.org/0000-0001-5957-4824)
- Haoji Qian
- Yan Liu (ORCID: https://orcid.org/0000-0001-5583-0587)
- Bing Chen (ORCID: https://orcid.org/0000-0001-5284-8618)
Institutions
- Xuzhou University of Technology (CN)
- Xidian University (CN)
- Zhejiang University (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11040324
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Key Research and Development Program of China
- National Natural Science Foundation of China - State Grid Corporation Joint Fund for Smart Grid