A Physics-Based Compact Model for Electromigration Failure Prediction and Dynamic IR-Drop Evaluation

In this work, a novel physics-based compact model for electromigration (EM) failure statistical distribution prediction and dynamic IR-drop evaluation is proposed for multi-segment interconnects. The proposed model takes into account the atomic migration paths, void nucleation-formation-growth phase, as well as the Gaussian distribution of activation energy and the dimension of the void. It can accurately describe the statistical distributions of interconnect resistance degradation and EM time-to-failure (TTF) resulted by process varieties during nanofabrication as well as dynamic IR-drop along time. The results of the model well agreement to the experimental data.