High Performance 4H-SiC DSRD with 1.4kV Peak Voltage, 400ps Risetime and 1-MHz Continuous Repetition-Rate
In this paper, a high-performance 4H-SiC Drift Step Recovery Diode (DSRD) is achieved. Experimental measurements demonstrate that our reported 4H-SiC DSRD could achieve a pulse peak voltage of 1.45 kV on 50 Ω load with a rise-time of 400-ps, resulting in a high voltage rise rate of 3.6 kV/ns. Then, the repetition frequency measurement result at 1 MHz is demonstrated in continuous operation mode, revealing that fabricated 4H-SiC DSRD with excellent dynamic stability.
Authors
- Xiaoyan Tang (ORCID: https://orcid.org/0000-0002-0759-0387)
- Fengyu Du (ORCID: https://orcid.org/0000-0002-7049-7177)
- Yu Zhou (ORCID: https://orcid.org/0000-0001-9439-3172)
- Lejia Sun (ORCID: https://orcid.org/0000-0001-9380-7484)
- Dengyao Guo (ORCID: https://orcid.org/0000-0002-8565-0322)
- Yuming Zhang (ORCID: https://orcid.org/0000-0001-7838-7725)
- Qingwen Song (ORCID: https://orcid.org/0000-0002-0642-4440)
- Jingkai Guo (ORCID: https://orcid.org/0009-0003-0228-8597)
Institutions
- Xidian University (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11040601
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China