On the Scalability of Nanosheet Oxide Semiconductor Transistors
We have investigated the scaling potential of nanosheet oxide semiconductor FETs (NS OS FETs) for monolithic 3D integration in terms of ALD material engineering, high-field transport, and statistical variability. The highlights are: (1) systematic comparison among InGaO, InZnO and InGaZnO grown by ALD, (2) demonstration of unsaturated carrier velocity behavior in sub-100nm gate length, (3) comparable variability of NS OS FETs against Si CMOS. This work provides insights for designing scaled NS OS FETs.
Authors
- Xingyu Huang
- Kota Sakai
- Zhuo Li (ORCID: https://orcid.org/0000-0002-1327-5172)
- Yukiharu Uraoka (ORCID: https://orcid.org/0000-0002-1319-3599)
- Takuya Saraya (ORCID: https://orcid.org/0000-0002-3796-7747)
- Mutsunori Uenuma (ORCID: https://orcid.org/0000-0002-3387-6805)
- T. Mizutani (ORCID: https://orcid.org/0000-0002-2358-3945)
- Masaharu Kobayashi (ORCID: https://orcid.org/0000-0002-7945-6136)
- Toshiro Hiramoto (ORCID: https://orcid.org/0000-0001-9469-2631)
- Kaito Hikake (ORCID: https://orcid.org/0009-0002-1311-4763)
- Sunghun Kim (ORCID: https://orcid.org/0000-0002-7269-2443)
- Takanori Takahashi (ORCID: https://orcid.org/0000-0001-8511-4194)
Institutions
- The University of Tokyo (JP)
- Nara Institute of Science and Technology (JP)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11040950
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00