Polyoxometalate-Doped Memristor with Redox Dynamics for Reliable Single-Component Artificial Neuron
This work reported a Polyoxometalate (POM)-doped <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Ag} / \text{WSe}_{2} / \text{Ag}$</tex> memristor (PDM) with reversible redox dynamics to implement steady leaky integrate-and-fire (LIF) neuronal behaviors. Based on POM-assisted targeted reduction of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Ag}^{+}$</tex>, the device demonstrates highly stable <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$I-V$</tex> characteristics and rapid self-reset performance under various voltage sweeping ranges. Besides, pulse amplitudedependent LIF characteristics can be simulated with a pulse width of 1 ms by a single PDM, facilitating simplifying the hardware implementations of spiking neural network.
Authors
- Su‐Ting Han (ORCID: https://orcid.org/0000-0003-3392-7569)
- Pengfei Han (ORCID: https://orcid.org/0000-0001-9482-7903)
- Yongbiao Zhai
- Yan‐Bing Leng
- Ziyu Lv (ORCID: https://orcid.org/0000-0002-7062-3647)
- Guohua Zhang (ORCID: https://orcid.org/0000-0002-3461-6028)
- Yuqi Zhang (ORCID: https://orcid.org/0000-0002-3426-4544)
- Ye Bo Zhou (ORCID: https://orcid.org/0000-0002-0273-007X)
- Hecheng Cai
- Shirui Zhu
Institutions
- Hong Kong Polytechnic University (HK)
- Shenzhen University (CN)
- Jilin University (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11040881
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00