GIT-Based Bipolar $p$-FET with Enhanced Conduction Capability on $E$-mode GaN-on-Si HEMT Platform

A GIT-based bipolar <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$p$</tex>-FET (G-BiPFET) structure is introduced to improve the conduction performance of GaN-based <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$p$</tex>-channel transistors. In G-BiPFET, a GaN-based gate injection transistor is cascaded with a conventional <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$p$</tex>-FET, boosting the conduction current by utilizing electrons as the majority carriers. The drain current density of the G-BiPFET significantly increases to 77 mA/mm, approximately 77 times higher than that of the conventional <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$p$</tex>-FET. Additionally, the G-BiPFET maintains a similar <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$I_{\text{ON}}/I_{\text{OFF}}$</tex> ratio and gate leakage as the conventional <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$p$</tex>-FET.