Enhanced Threshold Switching Devices Based on Conductive Filaments in SiO_x Through Vertically Aligned MoS₂ Layers

In this work, we investigate for the first time the resistive switching (RS) behavior in a bilayer stack of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{SiO}_{\mathrm{x}}$</tex> and vertically aligned <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{MoS}_{2}\left(\text{VAMoS}_{2}\right)$</tex>. We demonstrate threshold switching by forming silver (Ag) conductive filaments (CFs) in an amorphous <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{SiO}_{\mathrm{x}}$</tex> layer combined with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{VAMoS}_{2}$</tex> obtained through molybdenum (Mo) sulfurization. The <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{SiO}_{\mathrm{x}} / \text{VAMoS}_{2}$</tex> devices exhibit repeatable RS with faster switching times and higher hold voltages compared to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{SiO}_{\mathrm{x}}$</tex> devices without <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{VAMoS}_{2}$</tex>. The RS enhancement through <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{VAMoS}_{2}$</tex> layers shows promise for compact vertical device architectures for emerging memories and neuromorphic computing applications.