Multimode Transistors Based on Ion-Dynamic Capacitance

Electrolyte-gated transistors can function as switching elements, artificial synapses and memristive systems. However, insight into such devices, including the ion dynamics and transient capacitances, remains limited. Here we report a concise model for the transient ion-dynamic capacitance in electrolyte-gated transistors. The model predicts that plasticity, high apparent mobility, sharp subthreshold swing, and memristive conductance can be achieved by programming interfacial ion concentrations or scan speeds. We demonstrate such multimode transistors and different capabilities experimentally.