Wavelength-Dependent Reconfigurable Photo Memory Enabled by Organic-Gated Transistor

We presented a reconfigurable two-dimensional (2D) phototransistor, fabricated by integrating a J-aggregate PTCDI- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{C}_{13}$</tex> charge-trapping. This phototransistor exhibited switchable volatile and non-volatile photo response behaviors, controlled by the tunable drain voltage (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\text{ds}}$</tex>). At a negative <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\text{ds}}$</tex>, the device operates as a photodetector with a volatile photo response, while at positive <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\text{ds}}$</tex>, the photo transistor served as a photo memory achieving a high resistance ratio of approximately 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup>. The device demonstrates selectively retaining memory within a narrow wavelength, consistent with the absorption peak of the monolayer J-aggregate PTCDI-C13, showing the potential for wavelength-specific, reconfigurable photo-memory applications.