Heterointegrated Ga<sub>2</sub>O<sub>3</sub>-On-SiC RF MOSFETS
<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta$</tex> - <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Ga}_{2} \mathrm{O}_{3}$</tex> radio-frequency (RF) MOSFETs with high frequency performances were fabricated on the highly thermal conductive <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$4 \mathrm{H}-\text{SiC}$</tex> substrate through an ion-cutting process. The MOSFET yields a high current density of 661 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{mA} / \text{mm}$</tex>, a high record-high current cut-off frequency <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\left(f_{\mathrm{T}}\right)$</tex> of 47 GHz and maximum oscillation frequency (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$f_{\max }$</tex>) of 51 GHz. Furthermore, an output power density of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$296 ~\text{mW} / \text{mm}$</tex> and a high power gain of 11 dB at 2 GHz in continue wave (CW) mode.
Authors
- Xinxin Yu (ORCID: https://orcid.org/0000-0003-0898-8837)
- Rui Shen
- Jian Dong Ye (ORCID: https://orcid.org/0000-0002-5649-3831)
- Wenhui Xu (ORCID: https://orcid.org/0000-0002-5152-9196)
- Xin Ou (ORCID: https://orcid.org/0000-0002-0316-9958)
- Zhonghui Li (ORCID: https://orcid.org/0000-0002-7835-498X)
- Bing Qiao (ORCID: https://orcid.org/0009-0003-9983-344X)
Institutions
- Shanghai Institute of Microsystem and Information Technology (CN)
- Nanjing University (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11040172
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00