Recent Research on Ultrawide Bandgap Semiconductor Ga<sub>2</sub>O<sub>3</sub> and AlN
Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> and AlN have the characteristics of ultrawide bandgap, making them a promising choice for applications in power devices. In this talk, we will primarily present our recent work on Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> and AlN, including bandgap engineering by incorporating different metal elements into Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> to realize new ternary compound semiconductors and easier realization of p-type doping, photoluminescence characterization of 6.2 eV bandgap AlN epi-layers under bias voltage and various temperatures.
Authors
- Dao Hua Zhang (ORCID: https://orcid.org/0000-0002-5853-254X)
- Xian‐Hu Zha
- Yan Liu (ORCID: https://orcid.org/0000-0001-5583-0587)
- Shuang Li (ORCID: https://orcid.org/0000-0002-3970-1061)
- Rongjun Zhang (ORCID: https://orcid.org/0000-0001-8297-210X)
- Yu‐Xi Wan
Institutions
- Nanjing University of Science and Technology (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11040437
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00