Selecting Device, In-Memory Search, and Monolithic 3D Integration of RRAMs and 2D Devices Towards High Reliability and High Efficiency: (Invited Paper)

Resistive random-access memories (RRAMs) are highly promising for high-density memory and energy-efficient inmemory computing. Towards the integration of RRAM arrays, the sneak path leakage and IR drop problem need to be alleviated and the memory density should be further enhanced. Here we develop the consistent RRAM model, demonstrate two-dimensional (2D) selectors and one-selector-one-selector (1S1R) memory cells, perform monolithic 3D integration of 2D transistors and vertical RRAMs (VRRAMs), and show the promise for in-memory search applications.