Hafnia-Based XP-FeRAM: A Novel High-Speed and Low-Power Cross-Point Ferroelectric Memory for Data-Intensive Applications

Device and circuit co-optimization of a novel hafnia-based cross-point FeRAM (XP-FeRAM) are comprehensively investigated for high-density, high-speed and low-power memory applications. Planar and 3D vertical-stacked XP-FeRAM designs are demonstrated with application-specific device optimization, and the outstanding comprehensive performance are achieved with high 2P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</inf>, excellent disturbance immunity under low-voltage operation and fast switching at scaled size, as well as good device reliability. A modified V/ 2 operation scheme with in-situ write-back is further presented, leading to faster operation and lower power consumption than traditional 1T1C FeRAM. Combined with its excellent scalability, XP-FeRAM shows strong potential as a competitive candidate of future non-volatile memory technology for data-intensive demands.