Pixelated Germanium-on-Silicon Photodetector with High Responsivity for Short Wavelength Infrared Imaging

We present a novel short-wavelength infrared detector, the Ge-on-Si photodiode-body-biased MOSFET (GePD-MOS), which offers high sensitivity, a broad spectral range, and CMOS compatibility. This detector achieves responsivities of 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> A/W at 1310 nm and 8×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> A/W at 1550 nm, with a spectral response extending to 1.9 μm due to its unique internal amplification mechanism. The GePD-MOS demonstrates adjustable responsivity and maintains low dark current, highlighting its potential for various applications in SWIR imaging.