Laser-Induced Low Temperature Dopant Segregation Schottky Barrier Mosfet for Monolithic-3D

In this work, we present a BEOL-compatible lowtemperature (Low-T, <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\leq 500^{\circ} \mathrm{C}$</tex>) laser-induced silicide dopant segregation source/drain (LSDS S/D) technology for Monolithic-3D integrations. A nanosecond pulse green laser was used to induce dopant segregation of Schottky S/D, therefore a sharpened interface with high Schottky Barrier and a high impurity concentration are obtained. High performance CMOS devices are achieved with Ion > 100 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mu \mathrm{A} / \mu \mathrm{m}$</tex> at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{L}_{\mathrm{G}}=500 \text{nm}$</tex>. We also demonstrate inverters, ring oscillators and logic gates, presenting an alternative fabrication scheme suitable for M3D circuit applications.