Dual Functionality of MoS₂ in nFET and pFET Through Contact Metal Selection

Traditional transistor fabrication requires separate doping processes for both n-type and p-type field-effect transistors (FETs), which becomes increasingly challenging as device dimensions shrink. This paper explores the dual functionality of MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> in nFETs and pFETs through the selection of contact metals. N-type characteristics can be achieved in p-type MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> by using a low workfunction semimetal, allowing for the fabrication of both nFETs and pFETs on the same channel material without additional doping. Our approach simplifies the fabrication process and minimizes inter-device gaps.