Comprehensive Analysis of Oxidant Effects During ALD Process of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric Thin Films
To guide the process optimization of HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-based ferroelectric (FE) devices, the effects of oxidants (O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/H<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O) during atomic layer deposition (ALD) process of Hf<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf>Zr<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> films are systematically investigated. The results indicate that using the stronger oxidant (O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>) leads to higher remanent polarization (Pr) but poorer endurance, with significant leakage deterioration after wakeup and a pronounced imprint effect during cycling. In contrast, the weaker oxidant (H<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O) results in lower Pr but improves polarization switching speed. The influence of oxidants on pre-existing defects and interfacial reactions may be potential key factors. Our findings provide valuable insights for process optimization tailored to specific application requirements.
Authors
- Pengpeng Sang (ORCID: https://orcid.org/0000-0001-8071-3024)
- Jiezhi Chen (ORCID: https://orcid.org/0000-0003-2996-1406)
- Y. Thomas Hou (ORCID: https://orcid.org/0000-0003-3716-5768)
- Yaoyu He
- Xuepeng Zhan (ORCID: https://orcid.org/0000-0002-1701-9301)
- Jixuan Wu (ORCID: https://orcid.org/0000-0002-3207-9724)
- Xiaolei Wang (ORCID: https://orcid.org/0000-0002-9750-1906)
- Xiaopeng Li (ORCID: https://orcid.org/0009-0008-2790-5797)
- Xiaoyu Dou
- Yuwei Qu (ORCID: https://orcid.org/0000-0003-1179-2800)
Institutions
- Shandong University (CN)
- Chinese Academy of Sciences (CN)
- Institute of Microelectronics (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11040660
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation
- Natural Science Foundation of Shandong Province