Neural Network Assisted MOSFETs Gate Dielectric Traps Extraction

Neural network assisted MOSFETs gate dielectric traps extraction method as an emerging fast data-driven approach is studied. The proposed method extracts trap spatial and energetic distribution from the noise power spectral density (PSD) with two steps: 1) rough extraction using a customized multi-scale receptive fields Convolutional Neural Network (CNN), 2) refinement using Backpropagation Optimization (BO) network based on Gradient Descent (GD). The method is applied to a practical case, and successfully extracts the trap distribution.

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Publication Details

Published
2025-03-09
DOI
https://doi.org/10.1109/edtm61175.2025.11041066
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
0.00

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article

Neural Network Assisted MOSFETs Gate Dielectric Traps Extraction

Zheng Zhou, Xiaoyan Liu, Jinghan Xu
Advancements in Semiconductor Devices and Circuit Design
article

Neural Network Assisted MOSFETs Gate Dielectric Traps Extraction

Zheng Zhou, Xiaoyan Liu, Jinghan Xu
article en

Abstract

Neural network assisted MOSFETs gate dielectric traps extraction method as an emerging fast data-driven approach is studied. The proposed method extracts trap spatial and energetic distribution from the noise power spectral density (PSD) with two steps: 1) rough extraction using a customized multi-scale receptive fields Convolutional Neural Network (CNN), 2) refinement using Backpropagation Optimization (BO) network based on Gradient Descent (GD). The method is applied to a practical case, and successfully extracts the trap distribution.

Peking University (CN)
National Natural Science Foundation of China, Research and Development
Affordable and clean energy
Openalex Percentile: Top 87%
Advancements in Semiconductor Devices and Circuit Design
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