Neural Network Assisted MOSFETs Gate Dielectric Traps Extraction
Neural network assisted MOSFETs gate dielectric traps extraction method as an emerging fast data-driven approach is studied. The proposed method extracts trap spatial and energetic distribution from the noise power spectral density (PSD) with two steps: 1) rough extraction using a customized multi-scale receptive fields Convolutional Neural Network (CNN), 2) refinement using Backpropagation Optimization (BO) network based on Gradient Descent (GD). The method is applied to a practical case, and successfully extracts the trap distribution.
Authors
- Zheng Zhou (ORCID: https://orcid.org/0009-0008-3957-3144)
- Xiaoyan Liu (ORCID: https://orcid.org/0000-0002-6448-2008)
- Jinghan Xu (ORCID: https://orcid.org/0000-0003-4036-1241)
Institutions
- Peking University (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11041066
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Research and Development