Effect of the Channel Thickness on the Pbs Reliability and 1/f Noise of the ALD Ultrathin ITO Field-Effect Transistor

In this work, we report ITO transistors by atomic layer deposition with channel thickness of 2.5 nm and 3.4 nm. The 3.4-nm-thick ITO FETs exhibit a high field-effect mobility <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mu \left(36 \text{cm}^{2} / \mathrm{V} \cdot \mathrm{s}\right)$</tex> and a negligible <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\text{th }}$</tex> shift of -30 mV under <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\text{th }}+$</tex> 2 V. Meanwhile, the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1/f$</tex> noise behavior of 3.4 -nm-thick ITO FETs can be described by the carrier number fluctuation model.