High Dielectric Constant of HfO₂ Technology for Memory Applications

<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{HfO}_{2}$</tex> with ferroelectricity has been widely investigated for memory and logic applications, including doped by Zr, Si, La, … etc. The superlamination (SL) technique exhibits higher capacitance and dielectric constant as compared to solidsolution (SS). The maximum dielectric constant achieves as high as 46 for HZZ at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$[\text{Zr}]=66 \%$</tex> with morphotropic phase boundary (MPB) effect. Ferroelectric-based memory of ferroelectric capacitive memory (FCM) has gained significant attention due to the charge transfer concept, which is adopted with the SL technique. The SL technique exhibits higher capacitance and applicable remnant polarization (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{P}_{\mathrm{r}}$</tex>) benefits for FCM application to demonstrate a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{C}_{\text{HCS}} / \mathrm{C}_{\text{LCS}}$</tex> ratio of 245x. The feasible concept of coupling the MPB SL <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Hf}_{1-\mathrm{x}} \text{Zr}_{\mathrm{x}} \mathrm{O}_{2}$</tex> is practicable into emerging memory/synapse.