RESURF Ga<sub>2</sub>O<sub>3</sub>-On-SiC Field Effect Transistors for Enhanced Breakdown Voltage
Heterosubstrates have been extensively studied as a method to improve the heat dissipation of Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> devices. In this simulation work, we propose a novel role for p-type available heterosubstrates (e.g, SiC), as a component of a reduced surface field (RESURF) structure in Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> lateral FETs. The RESURF structure can eliminate the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$E$</tex>-field crowding and contribute to higher breakdown voltage. The designing strategy of the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$p$</tex>-type region, and the influence of interface conditions are systematically studied using TCAD modeling.
Authors
- Mengyuan Hua (ORCID: https://orcid.org/0000-0003-3016-1588)
- Xiaolei Zhang (ORCID: https://orcid.org/0000-0001-9415-3136)
- Junting Chen (ORCID: https://orcid.org/0009-0001-3032-2268)
- J. Zhao (ORCID: https://orcid.org/0000-0002-4919-2440)
- Jin Wei
Institutions
- Peking University (CN)
- Southern University of Science and Technology (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11040932
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00