Data Retention in Co-Doped Hzo Fecaps: Roles of Fe Thickness and Thermal Budget

This study investigates data retention (DR) in co-doped Hafnium Zirconium Oxide (HZO) ferroelectric capacitors (FeCAPs) under high-temperature stress. Imprint, due to charge injection at an metal/ferroelectric (M/FE) interface, impacts DR, especially in opposite-state retention. The vulnerability to imprint is shown to be mitigated by high annealing temperature (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&gt;600^{\circ} \mathrm{C}$</tex>), operations under high program electric fields (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\simeq 4 \text{MV} / \text{cm}$</tex>), and thick FE layer (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$t_{F E} \simeq 15 ~\text{nm}$</tex>). Two samples demonstrated DR exceeding 1000 hours at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$125^{\circ} \mathrm{C}$</tex>, with a model suggesting DR for over 10 years for the optimally annealed samples, supporting FeCAP in high-temperature applications.