Dual-Functional Volatile and Nonvolatile Resistive Switching Characteristics of $\mathbf{C u} / \mathbf{G a}_{\mathbf{2}} \mathbf{O}_{\mathbf{3}} / \mathbf{P t}$ Memristor Deposited Via Electron Beam Evaporation
In this work, we investigate the dual functionality of volatile and nonvolatile memory in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Cu} / \text{Ga}_{2} \mathrm{O}_{3} / \text{Pt}$</tex> memristor by tuning the compliance current. These devices, fabricated using electron beam evaporation, demonstrate impressive nonvolatile memory switching characteristics, including low switching voltages, 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> switching cycles, <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$>10^{3} ~\mathrm{s}$</tex> data retention, and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$>10^{2}$</tex> HRS/LRS ratio. Our work provides an effective and straightforward fabrication technique for using <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Ga}_{2} \mathrm{O}_{3}$</tex> in the development of advanced memristors.
Authors
- Hao Zhang (ORCID: https://orcid.org/0000-0003-1693-3545)
- Nan He (ORCID: https://orcid.org/0000-0002-8885-2907)
- Shuai Chen (ORCID: https://orcid.org/0000-0002-8562-5784)
- Zi Li (ORCID: https://orcid.org/0000-0002-8385-4671)
- Xinpeng Wang (ORCID: https://orcid.org/0000-0002-0580-3895)
- Tong Yi
- Lei Wang (ORCID: https://orcid.org/0000-0001-8085-2374)
Institutions
- Nanjing University of Posts and Telecommunications (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11041612
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministry of Science and Technology of the People's Republic of China