Optoelectronic Switching Memory Device Based on WO<sub>3</sub> Semiconductor Film Enables High-Efficiency In-Sensing Reservoir Computing for Speech Recognition
Optic in-sensing computing system exhibits great potential in advanced computing. An emerging optoelectronic synapse device with the structure of Au/WO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/Au is prepared by sputtering, showing an analogue switching memory behavior and positive photoconductance effect-driven short-term synaptic plasticity (STP), long-term synaptic plasticity (LTP), paired pulse facilitation (PPF). This optic synapse device can provide high data transmit rate (∼ 9496.62 bit S<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−1</sup>), response on 1000 Hz 405-nm light, and execute reservoir computing for speech processing with 95.8% accuracy.
Authors
- Wenyang Xu (ORCID: https://orcid.org/0000-0002-3205-7891)
- Xiang Ke (ORCID: https://orcid.org/0000-0001-6695-6599)
- Guangdong Zhou (ORCID: https://orcid.org/0000-0003-2488-2733)
- Dongdong Gu (ORCID: https://orcid.org/0000-0002-8258-6935)
- Xun Li (ORCID: https://orcid.org/0000-0002-1921-1006)
- Jie Li (ORCID: https://orcid.org/0000-0002-3400-8241)
- Yu Xu
Institutions
- Southwest University (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11040366
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Fundamental Research Funds for the Central Universities