Categorization of Stacking Faults and Their Effects on I-V Characteristics in 2NM P-Type GAA Nanosheet Transistors

Gate-All-Around (GAA) nanosheet field-effect transistors (NSFETs) face challenges with stacking faults (SFs) that disrupt stress transmission, affecting device performance. This study categorizes these faults and examines their impact on stress, carrier mobility, and I-V characteristics using technology computer-aided design (TCAD) simulations. Results demonstrate that specific fault types significantly alter stress distribution and electrical characteristics, leading to variations in boron diffusion rates and on/off-current, thereby emphasizing the importance of managing SFs to enhance p-type NSFET performance.