Opportunities for Wide and Ultrawide Bandgap Devices with Heterogenous Integration
This work reviews the latest progress in wide and ultrawide bandgap semiconductor RF and power devices, in particular selected highlights in GaN and Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> technologies are presented. Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> trench diodes with the highest reported breakdown voltage of 4kV are discussed, in addition to the benefits of heterogenous integration, for example, with diamond, are highlighted.
Authors
- James W. Pomeroy (ORCID: https://orcid.org/0000-0003-3443-8759)
- Matthew D. Smith (ORCID: https://orcid.org/0000-0001-6145-1209)
- Aditya K. Bhat (ORCID: https://orcid.org/0009-0007-8328-7738)
- Zequan Chen (ORCID: https://orcid.org/0000-0003-3668-1912)
- Sai Charan Vanjari (ORCID: https://orcid.org/0000-0003-4448-4943)
- Martin Kuball (ORCID: https://orcid.org/0000-0003-3070-1070)
- Anshika Anjali
Institutions
- University of Bristol (GB)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11040574
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00