Oxidation of TiN Interface and Improvement of AlN Intercalation of ZrO ₂ Capacitor in DRAM

In the DRAM capacitor field, due to the electrode TiN oxygen-gettering nature, an additional oxide layer at the interface of the capacitor was inevitably made. To prevent the formation of oxide layer, we adopted AlN as oxygen diffusion blocking layer (ODBL) and optimized the thickness of this interface layer. Moreover, AlN acted as ODBL could take into account both oxidation resistance and electrical properties, which positively contributed to the improvement of interface quality in the DRAM capacitor.