High Density and High Reliability (H <sup>2</sup> DR) RRAM for Advanced Memory Technology
The rapid advancement of emerging fields such as artificial intelligence has significantly increased the demand for highperformance embedded memory. Resistive random-access memory (RRAM) has received substantial attention due to its simple structure and exceptional integration density. This paper addresses the critical requirements of high-density and high-reliability (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{H}^{2} \text{DR}$</tex>) RRAM, providing an in-depth analysis of key technologies for both 2D and 3D RRAM. Involving oxygen vacancy modulation, innovative memory cell designs, and advanced programming methodologies. In combination, these advancements establish a technical foundation for the large-scale integration of RRAM in future applications.
Authors
- Cuimei Wang
- Qishen Wang (ORCID: https://orcid.org/0000-0002-4013-6426)
- Zimeng Wu (ORCID: https://orcid.org/0000-0002-7792-8291)
- Yimao Cai (ORCID: https://orcid.org/0000-0002-6854-8211)
- Zongwei Wang
- Shengyu Bao (ORCID: https://orcid.org/0000-0001-7848-5958)
- Lin Bao (ORCID: https://orcid.org/0000-0002-3146-6124)
- Jingwei Sun (ORCID: https://orcid.org/0009-0007-7888-0625)
- Yuhang Yang (ORCID: https://orcid.org/0000-0002-5293-9728)
- Ru Huang
Institutions
- Beijing University of Posts and Telecommunications (CN)
- Peking University (CN)
- State Key Laboratory of Information Photonics and Optical Communications
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11040878
- Citations
- 2
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 1.46