EOT of 0.28 nm in MIM Capacitor With Laminated HfZrON and In-Situ NH <sub>3</sub> and O <sub>2</sub> Plasma Treatments
A capacitance density (C) of 12.1 μF/cm2, dielectric constant (k) of 55, equivalent oxide thickness (EOT) of 0.28 nm, and leakage current density (J<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub>) of 7.1*10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-5</sup> A/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> in a metal-insulator-metal capacitor (MIMCap) are obtained by using a laminated HfZrON (HZON) dielectric with suitable in-situ NH<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> plasma treatments at heterogeneous interfaces and in-situ O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> plasma treatments during ZrO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> deposition. The high performance MIMCap could be attributed to the reduced interface states and oxygen vacancies in HZON dielectric. This laminated HZON is promising for decoupling capacitors in IC and DRAM applications.
Authors
- Kuei‐Shu Chang‐Liao (ORCID: https://orcid.org/0000-0003-1362-7892)
- Huan Wu (ORCID: https://orcid.org/0009-0001-2050-9264)
Institutions
- National Tsing Hua University (TW)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2025-06-30
- DOI
- https://doi.org/10.1109/led.2025.3584362
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00