On the Understanding of Temperature Dependence of Flicker Noise in Advanced FinFET Technology

Temperature Dependence will complicate the noise problem of FinFET devices. Our experiments show that Flicker noise is obviously affected by high temperature, and shows different temperature dependence under different gate bias. That is, at low gate bias, high temperature makes the flicker noise of the device lower than that at room temperature, while at high gate bias, high temperature makes the flicker noise of the device higher than that at room temperature. A new physical-based model is used to analyze the temperature dependence of flicker noise. The decrease of high temperature noise at low bias is mainly affected by the decrease of Hooge parameter, and the increase of high temperature noise at high bias is mainly affected by the access resistance induced noise. This increase in noise due to high temperatures is likely to be more significant in future GAAFET and CFET devices.