Distinctive Quantum Confinement Characteristic of 3 nm Gate-All-Around (GAA) PMOS Multi-Bridge-Channel-FET (MBCFET)

In this paper, we demonstrate gate capacitance characteristics of MBCFET compared to those of FinFET, focusing on quantum confinement. Unlike FinFET and NMOS MBCFET, experimental measurement shows that only PMOS MBCFET exhibits a distorted gate capacitance characteristic due to quantum confinement effect, which depends on its silicon orientation and stress. This characteristic originated from the change of the density of states (DOS) is also shown in transconductance as well as the cut-off frequency properties. Furthermore, the impact of the temperature and layout configurations on the distorted capacitance are confirmed through experimental measurement. Using BSIM simulation, the influence of the distorted capacitance-voltage (C-V) characteristic on the performance of ring oscillator (RO) circuits is analyzed.