High-Frequency Capacitance Measurement Techniques and Their Applications in Memory Technology Development

In the era of artificial intelligence and big data, the demand for high-speed and reliable memory technologies is growing rapidly. For semiconductor memories such as DRAM and FeRAM, metal-insulator-metal and metal-insulator-semiconductor capacitors play crucial roles, and their high-frequency characteristics (e.g. from 3MHz to 3GHz) significantly impact the device performance. However, conventional measurement techniques such as the bridge method struggle to provide accurate capacitance values at such frequencies, posing a challenge for memory technology development. In this work, we introduce our recent studies on two high-frequency capacitance measurement techniques: the network analysis method and the transient signal method. The initial results suggest both methods can accurately extract DUT capacitance up to 1GHz, offering valuable insights for memory device innovation.