An Atomic Layer Etching Technique for MOCVD in-Situ SiN<sub>x</sub>
This work systematically established the atomic layer etching (ALE) technique for MOCVD in-situ <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{SiN}_{\mathrm{x}}$</tex>. Achieving ultralow etching damage, with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 110 \%$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 220 \%$</tex> improvement in surface morphology (RMS roughness) compared to asgrown and continuous etching wafers. Ultra-high etching precision with etching per cycle (EPC) of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.13 ~\text{nm} /$</tex> cycle was obtained. The mechanism of ALE was validated. This technique optimized the patterning of in-situ <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\operatorname{SiN}_{x}$</tex> passivation/dielectric on GaN, laying the foundation for realizing high-performance Si-based GaN HEMTs.
Authors
- Fangzhou Du (ORCID: https://orcid.org/0000-0002-8151-8092)
- Ziyang Wang (ORCID: https://orcid.org/0000-0001-6130-6212)
- Yang Jiang (ORCID: https://orcid.org/0000-0002-5430-2931)
- Qing Wang (ORCID: https://orcid.org/0000-0002-5478-5662)
- Hongyu Yu (ORCID: https://orcid.org/0000-0002-5756-868X)
- Xinyi Tang (ORCID: https://orcid.org/0000-0002-7223-1321)
Institutions
- Southern University of Science and Technology (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11040653
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00