High-Performance 2D Fets With Single-Crystal Anatase TiO₂ High-$\kappa$ Dielectric

Several bottlenecks must be resolved before two-dimensional (2D) materials-based transistors can be adopted for advanced electronics, particularly the challenge of coupling high- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\kappa$</tex> dielectrics with 2D semiconductors without adverse effects and continuing to scale their capacitance equivalent thickness (CET). In this work, we have developed a novel single-crystal dielectric and a corresponding integration approach to achieve 2D MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> field-effect transistors (FETs) with outstanding performance, including steep SS (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 68 \text{mV} /$</tex> dec) and high ON/OFF ratio (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&gt;10^{7}$</tex>).